| 摘要 |
PURPOSE:To obtain a high-speed complementary type bipolar transistor having a substrate collector type PNP transistor, by a method wherein after an N type buried layer for an NPN transistor and a buried layer for the collector of a PNP transistor have been provided in parallel on a P type semiconductor substrate, both the transistors are formed successively. CONSTITUTION:On a P type semiconductor substrate 1, an N type buried layer 2 is formed, and a P type buried layer 3 is formed at a position separate therefrom. On such a substrate, an N type epitaxial layer 4 is formed having a thickness of 1- 3mum. Then, such regions are formed by a diffusion or injection method as an N type region 5 to be the collector contact region of an NPN transistor, a P type region 6 to be the collector contact region of a PNP transistor, a P type region 7 to be a separating region, and an N type region 8 to be a base. Then, a P type region 9 to be an emitter, a P type region 10 to be a base, an N<+> layer 11 to be a contact region, and an N<+> layer 12 to be an emitter are formed to obtain a PNP transistor and an NPN transistor. |
