| 摘要 |
PURPOSE:To prevent an abnormal diffusion and to provide a diffusion region under a good control by a method wherein openings are formed in different kinds of crystals and diffusion mask layer placed on a substrate crystal, and impurities are diffused into the substrate plate. CONSTITUTION:Semiconductor crystal 22 having a different chemical characteristic is grown on the semiconductor substrate plate 21, the diffusion mask 3 arranged on the semiconductor crystal is applied as an etching mask, while an opening is formed in the semiconductor crystal 22, a diffusion is performed in the impurity gas so as to form a diffusion area 6, then the mask 3 and the crystal 22 are removed by a selective etching operation. Thereby, a normal diffusion is performed for the lower crystal 21 when no stress is applied thereto, while a normal diffusion shape may be provided, and thus it is possible to provide a sufficient reduction of crystal defects which may be caused by a stress therein. |
