| 摘要 |
PURPOSE:To contrive the improvement of reliability for an EAROM or the like with a simple process by forming gate electrodes by only-crystal Si or high melting point metal before forming gate structure such as an MNOST on the gate insulating film of an MOST. CONSTITUTION:n<+> layers 12, silicon oxide films 13, 14 for an MNOST and a normal MOST are formed in a p type Si substrate 11 and a poly-crystal silicon film 15 is superposed on the layers 12, films 13, 14. Next, the film 15 is removed after leaving only the film 15 on the first gate region of the MOST by PEP and the exposed film 14 are removed. Next, silicon nitride films 17 are superposed on the whole surface after forming ultrathin silicon oxide films 16. The films 17 are removed by leaving only the films 17 on the second gate region of the MNOST by PEP and then, the gate fetching electrodes 18 of the MOST, the electrodes 183-186 or the like for each element are formed. |
