| 摘要 |
PURPOSE:To prevent the decrease in current amplification factors of transistors in an I<2>L circuit, by selectively providing an impurity region whose diffusion coefficient is large in a region wherein conductive type impurities whose diffusion coefficient is small are embeded, thereafter forming an epitaxial layer. CONSTITUTION:An Sb diffused layer 202 is formed at a specified region in a P type substrate 201. Then, a P diffused layer 203 is formed in such a way that the edge of the layer 203 is located at the inner position from the junction on the side of an injector 209 in a region where P type base 208 is to be formed, and an active base layer 207 is not covered thereafter, an N type epitaxial layer 205 is formed. By the conventional diffusing process, are formed N<+> type embeded layers 222 and 223, an N type well 206, a P type base 208, a P type injector 209, and an N<+> type collector 210. Thus the I<2>L structure is obtained. In this method, the current amplification factor of the reverse vertical type NPN transistor can be increased, and the decrease in the current amplification factor of the lateral PNP transistor can be prevented. |
