| 摘要 |
<p>PURPOSE:To position inner leads with high density by shearing an inner-lead forming section in the direction of lead-thickness so that mutually adjacent two inner leads have a clearance in the vertical direction and forming a clearance in the horizontal direction of two inner leads in small size. CONSTITUTION:A large number of inner leads 11 connected to electrodes 3a for a semiconductor element 3 through wires 5 are shaped around a die pad 1. A slight clearance 12 in size smaller than lead-thickness is formed between mutually adjacent two inner leads 11a, 11b at that time. Consequently, a clearance in the horizontal direction in the inner leads 11a, 11b is set in size smaller than frame-thickness. Accordingly, the inner leads 11 are positioned around the die pad 1 with high density.</p> |
