发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
The semiconductor memory contains a degenerate semiconductor layer (1) and a nondegenerate semiconductor layer (2) having traps in the energy gap. The conductivity type of the degenerate semiconductor layer (1) is opposite to that of the nondegenerate semiconductor layer (2). Situated between the degenerate semiconductor layer (1) and the nondegenerate semiconductor layer (2) is a dielectric layer (4) capable of tunnel conduction. Deposited on the nondegenerate semiconductor layer (2) is a layer of material (5) which forms a potential barrier with the nondegenerate semiconductor layer (2) and, together with the dielectric layer (4) which is capable of tunnel conduction, prevents the penetration of the charge carriers from the degenerate semiconductor layer (1) and from the ohmic contact (6) into the nondegenerate semiconductor layer (2). <IMAGE> |
申请公布号 |
JPS5710283(A) |
申请公布日期 |
1982.01.19 |
申请号 |
JP19810073370 |
申请日期 |
1981.05.15 |
申请人 |
OORUDENA TOURUDOOBOBO KURASUNO |
发明人 |
MORUDEYUKU IRITSUCHI ERINSON;MARATO RAIMUDOZANOBUITSUCHI MA;BORISU AREKUSEEBUITSUCHI MARAH;BUADEIMU IWANOBUITSUCHI POKARU;SERUGEI ANATORIEBUITSUCHI TERE;GENRIKU URADEIMIROBUITSUCHI SU;BUITARII GEORUGIEBUITSUCHI TES |
分类号 |
H01L27/112;G11C16/02;G11C17/00;H01L21/8246;H01L21/8247;H01L29/15;H01L29/74;H01L29/788;H01L29/792;H01L29/861;H01L45/00 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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