| 摘要 |
PURPOSE:To obtain an SOS type FET by a method wherein a monocrystalline substrate being provided selectively with oxide films, a semiconductor layer is formed being made to single crystal by laser annealing, and a channel region, source and drain regions are formed in the layer. CONSTITUTION:The oxide films 2 are formed selectively in the n<+> type Si substrate 1, and polycrystalline Si is accumlated on the surface. The polycrystalline Si is annealed by a laser beam, for example, to form a monocrystalline layer 3 making the exposed surface of the substrate 1 as a core. After field films 4 are formed, B ions, for example, are implanted in the monocrystalline layer 3 to convert it to p type. Then after thin oxide films 5 to be used as gate films and polycrystalline Si gate electrodes 6 are formed, phosphorus is ion implanted, for example, using the electrodes 6 as masks to form drain regions 7 and a source region 8 being connected in common with the substrate 1. Accordingly the MOSFET having active regions on the oxide films 2 can be formed. |
