| 摘要 |
PURPOSE:To prevent the disconnection of a gate bus line even when there is a pin hole in the upper layer of the gate bus line by forming a film consisting of a material difficult to be dissolved to a buffer hydrofluoric acid solution while being superposed to the gate bus line. CONSTITUTION:A gate bus line 24 composed of double layers of a film 21 and a film 22 and a gate electrode 24a are formed onto a glass substrate 1, and a silicon nitride film 10 and a silicon film 11 are shaped onto the whole surface. A photo-resist film 14 is formed in order to form source-drain electrodes while holding a gate region, and a naturally generated oxide film on the silicon film 11 is removed. A buffer hydrofluoric acid solution is employed in the process. Since the gate bus line 24 and the gate electrode 24a are shaped in double layers in which the film 22 in nickel-chromium, platinum, gold, etc. is laminated on the film 21 in molybdenum, etc., the gate bus line 24 is not dissolved and disconnected even when there is a pin hole 12 in the laminate of the silicon nitride film 10 and the silicon film 11. |
