| 摘要 |
PURPOSE:To stably deposit and form a hardly protruded metallic film of high quality with high reproducibility by forming the cross section of the shield of a substance to be sputtered into a triangular shape. CONSTITUTION:The cross section of the shield 23 of a substance to be sputtered in the vicinity of a target 22 is formed into a triangular shape, and the shield 23 is attached on a target supporting table 21 while facing the oblique face 24 toward the target 22 so that the target material is chiefly deposited on the face 24. The shield 23 is made of metal with high heat conductivity such as Cu or Al. Using this evaporation source for sputtering a high purity sputtered film free from impurities is formed on a substrate. This source can be utilized in a process of wiring electrodes for a semiconductor integrated circuit. |
