发明名称 Method for the preparation of highly heat-resistant relief structures and the use thereof
摘要 The invention relates to a method for the preparation of highly heat-resistant relief structures on the basis of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones by applying radiation-sensitive soluble polymer precursor stages to a substrate in the form of a film or a foil; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions and optionally, by subsequent annealing; as well as the use of relief structures so prepared. It is an object of the invention to simplify the preparation of relief structures of the type mentioned. For this purpose, it is provided to use as the polymer precursor stages addition products of olefinically unsaturated monoepoxides to carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic acid dianhydrides and diamino compounds or diamino compounds with at least one orthoposition amido group or of aromatic and/or heterocyclic dihydroxy dicarboxylic acids or corresponding diamino dicarboxylic acids and diisocyanates. The relief structures prepared by the method according to the invention are suitable in particular for use as a resist, surface coating material and insulating material.
申请公布号 US4311785(A) 申请公布日期 1982.01.19
申请号 US19800179454 申请日期 1980.08.19
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 AHNE, HELLMUT;KUEHN, EBERHARD;RUBNER, ROLAND;SCHMIDT, ERWIN
分类号 C08G73/00;C08G73/10;C08L79/04;G03F7/004;G03F7/038;(IPC1-7):G03C1/70 主分类号 C08G73/00
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