发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To prevent the malfunction, etc., of a circuit connectd to an output circuit by eliminating hazards of a memory output by outputting data in a selected memory after an address input changes and then data with a specific level is outputed. CONSTITUTION:When a row line R0 is specified and a column specifying line C0 is specified, a transistor T0 turns on to lead the stored data of a memory cell MS, at the intersection of a column line I0 and the row line R0, to a node S. The potential at this node S is supplied as an output signal H from a column gate circuit 14 to an output circuit 15. On detecting the potential at the node S, this output circuit 15 performs waveform shaping, amplification, etc. to output the data contents of a selected memory cell from an output terminal OUT as an output signal D. This output circuit 15 is further supplied with a signal B from a pulse generating circuit 16 which generates the pulse according to charge of address data Ao-Ai.
申请公布号 JPS578988(A) 申请公布日期 1982.01.18
申请号 JP19800082421 申请日期 1980.06.18
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 IWAHASHI HIROSHI;ASANO MASAMICHI
分类号 G11C11/41;G11C7/10;G11C11/413 主分类号 G11C11/41
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