| 摘要 |
PURPOSE:To obtain a TR gate with a large degree of freedom of a transfer pattern, by providing a transfer swiching transfer pattern with a different conductor pattern for control over a transfer direction from one for bubble driving. CONSTITUTION:The circuit consists of a thin magnetic film 1 developed on a nonmagnetic substrate 2 and capable of holding magnetic bubbles 11, magnetic-bubble driving conductor layers 31 and 32 formed on it across a spacer at an interval and having rectangular or elliptic slots 20, and a conductor pattern layer 33 for transfer direction control applied with the gradient of a local magnetic field controlling the magnetic bubble transfer direction. The conductor layers 31 and 32, and 33 are fed with bubble driving currents 41 and 42, and a transfer control current 43. For this purpose, a TR gate part wherein the 1st magnetic bubble transfer path and the 2nd magnetic bubble transfer path of a magntic bubble element of major/minor loop constitution are close to each other is provided with the conductor pattern 33 for transfer direction control, so that magnetic bubbles are moved easily from the 1st transfer path to the 2nd one. |
