| 摘要 |
PURPOSE:To perform the sufficient protection of the gate film of a semiconductor integrated circuit device by a method wherein one end part of a diffused resistance region to be connected to an MOSFET region and the other part of the diffused resistance region to be supplied with an input signal or to be connected to an output terminal are arranged properly in relation to a channel stopper region. CONSTITUTION:The diffused resistance region 12 and the channel stopper regions 13 are formed in a semiconductor substrate 11 in addition to the MOSFET element region. The one end part 121 of the diffused resistance region 12 is formed being close to this channel stopper region 13 as to generate a junction withstand voltage between the channel stopper region 13. While the other end part 122 of the diffusion region 12 to be connected to an input terminal is formed being separated from the channel stopper region 13 as to generate a junction withstand voltage between the semiconductor substrate 11. |
