| 摘要 |
PURPOSE:To obtain a diode in which a depletion layer does not reach an ohmic layer even in a thin epitaxial layer by a method wherein a lower surface separating layer functioning as an anode of the diode is formed in a divided shape, and the N type epitaxial layer is grown. CONSTITUTION:The lower surface separating layers 15, 16, 17 made up in separated shapes are formed on an N type silicon substrate 5, the epitaxial layer 7 is made up, and side surface separating layers 9, 10 and the N<+> type ohmic layer 12 are built up. When inverse voltage is applied to the diode which uses the P type seprating layer as an anode and the N type epitaxial layer 7 as a cathode, the depletion layer 18 expands gradually to the epitaxial N layer 7, but expands along the side surface separating layers 9, 10 at first because the lower surface separating layers 15, 16, 17 are formed at intervals in the horizontal direction, and reaches the lower surface separating layer 16 and expands in the vertical direction. The depletion layer due to surge voltage does not reach the ohmic layer even in the thin epitaxial layer. |
