| 摘要 |
PURPOSE:To prevent an electric short circuit between an emitter and a collector, the deterioration of a transistor characteristic and the lowering of yield by deeply forming the depth of a junction of a base region in an interface region of a buried silicon oxide film. CONSTITUTION:A silicon dioxide film 12 is made up on a collector region 11, and a silicon nitride film 13 is built up selectively on the film 12. The base region 15 is formed according to ion injection, using a photo-resist film 14 as a mask. Oxidation is conducted, and the buried silicon film 16 is made up. In the base region formed in this manner, the depth of the junction is made deeper than other base region in the interface region of the buried silicon oxide film. Accordingly, a short circuit between the emitter and the collector can be prevented. |
