| 摘要 |
PURPOSE:To eliminate a shortcircuit defect with a semiconductor crystal even if wirings are deformed by an external force to be hung down after bonding by forming an electric insulator having a thickness exceeding the upper surface of an element at the peripheral edge of an element forming surface. CONSTITUTION:After a plurality of semiconductor elements are formed on a semiconductor wafer, an oxide layer of a region L which contains a separating portion 1 between elements of an element forming surface is removed, and an electrically insulating layer (e.g., polyimide resin) is bonded to the entire surface thicker than the highest surface of the element. Then, only the region L remains by utilizing technique such as a photoetching method, and the other is removed to form an electric insulator 7 on the region L. After an electric test of each semiconductor element is finished, the center of the region L, the separating portion 1 is cut by a dicer to obtain semiconductor chips 2. Since the insulator 8 is formed higher than the height of the element on the peripheral edge 6 of the chip 2, wirings 4 are bonded to electrode pads 6 of the element over the insulator 8 by wire bonding after mounting the chip 2. |
