SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To attain high integration of a semiconductor device by a method wherein a metal film is formed adhering on the surface of a diffusion layer formed in a silicon substrate, and a gate and a wiring between the gate and the metal film are formed with Mo films. CONSTITUTION:The diffusion layer 6 is formed in the silicon substrate 1 making a photo resist to cover the part to be corresponded to a gate oxide film 4 as a mask. Then the metal film 9 is formed on the region including on the diffusion layer 6 and excluding on the gate oxide film 4 by the lift off technique, and the Mo films 3 are formed selectively on the gate oxide film 4 and the metal film 9. The Mo films 3 are used both as the gate and the wiring to connect the gate to the metal film 9.