发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable the copying of a mask pattern to wafer to be accurately performed, before the exposing process of the wafer, by preliminarily forming the concave grooves in the wafer surface, and providing intimate contact between the wafer and the mask. CONSTITUTION:Before the exposing process of the wafer, etcing is performed at the part of the wafer 201 where scribe lines are formed later on, and the concave grooves 204 and 204' whose width is several tens of mu and depth is 1mu are provided. Since the deep grooves are preliminarily formed, air mass is not present between the wafer 201 and the mask 202, and the wafer and the mask are intimately contacted throughout the area. In this method, the mask pattern is accurately copied, and fine machining can be accomplished.
申请公布号 JPS577932(A) 申请公布日期 1982.01.16
申请号 JP19800083204 申请日期 1980.06.19
申请人 NIPPON ELECTRIC CO 发明人 HAMANO KUNIYUKI;SAKAMOTO MITSURU;NAKAMAE MASAHIKO
分类号 H01L21/027;H01L21/30;(IPC1-7):01L21/30 主分类号 H01L21/027
代理机构 代理人
主权项
地址