| 摘要 |
PURPOSE:To prevent over-etching in an etching process by etching an insulating film, using a material formed by bringing one section of a photo-resist film to a melted condition as a mask. CONSTITUTION:An oxide film 12, a nitride film 13 and a lower layer wiring material are laminated and made up on a substrate 11, and lower layer wiring 16 with the desired shape is obtained by employing the photo-resist film 15. The photo- resist film 15 is melted at the melting temperature, the fringe of the lower layer wiring 16 is covered and the film 15 is changed into a melted photo-resist film 17 and the nitride film 13 is etched using the film 17 as a mask. In this case, the film 13 is over-etched toward a lower section of the melted photo-resist film 17, but it is not etched up to the lower side of the lower layer wiring 16. Lastly, the melted photo-resist film 17 is removed, the layer insulating film is formed and the insulating film is coated with upper layer wiring. Accordingly, an accident of disconnection is not generated in the upper layer wiring, and reliability is improved. |
