| 摘要 |
PURPOSE:To enable to attain high integration and high density of MOS transistors by a method wherein a source and a drain regions are fomed with single crystal silicon layers on a semiconductor substrate, and a gate electrode is formed with polycrystalline silicon on the substrate. CONSTITUTION:The inversely conductive source and drain regions 7 consisted of single crystal silicon layers are formed on the uniconductive semiconductor substrate 1. The gate electrode 4 consisted of polycrystalline silicon is formed on the semiconductor substrate 1. The gate electrode 4 is covered with an oxide film 5. Moreover field oxide films 2 to separate between elements are formed on the semiconductor substrate 1. |
