| 摘要 |
PURPOSE:To stabilize the oscillation mode against the input for the subject semiconductor laser device by a method wherein the determination of an oscillator mode is performed in the form of a refractive index. CONSTITUTION:A striped form P type InGaAsP layer 13 is formed on a P InP type and an upper electrode 1a is provided directly on the surface of the striped form P type layer 13a. The forbidden band width of the striped form P type InGaAsP layer 13a is wider than that of an N on P type InGaAsP layer 10. The number of waves propagating an active layer on the P type InGaAsP layer 13a, which is the stripped section, differs from that on the other sections. Accordingly, the oscillation mode can be determined in the form of a refractive index. |
