发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To protect a contact against an electrostatic breakdown so that a large quantity of current flows by providing an aluminum electrode film in contact with a polysilicon film via a contact hole of the shape for surrounding a bonding pad hole covered with an insulating film on the polysilicon film under the pad hole. CONSTITUTION:A polysilicon 3 is wired in an arbitrary width to surround a bonding pad hole 2, aluminum 1 is deposited thereon, and a phosphorus glass (DSG) of the hole 2 is etched. Many aluminum-polysilicon contacts 4 are provided around the hole 2. Since many contacts 4 can be provided around the hole 2, a current amount concentrated on the contacting surfaces of the one aluminum-polysilicon contact 4 is reduced to decrease a current resistance value to the contacting surface.
申请公布号 JPS62237737(A) 申请公布日期 1987.10.17
申请号 JP19860081701 申请日期 1986.04.08
申请人 NEC CORP 发明人 OKAMOTO SANAE
分类号 H01L23/60;H01L21/60 主分类号 H01L23/60
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