| 摘要 |
PURPOSE:In producing a compound semiconductor by LEC method, to prevent extraordinary growth in crystal pulling up process, by keeping temperature gradient in melt at a specific condition and carrying out crystal growth. CONSTITUTION:In producing a compound semiconductor by LEC method wherein an impurity is added to melt, crystal is grown while keeping temperature gradient DELTAT(g) in melt at solidification ratio g in correlation shown by the formula DELTAT(g)=DELTAT(g=0)X(1-g)<k-1> when temperature gradient in melt at starting of crystal is DELTAT(g=0) and coefficient of segregation is k. Compound semiconductor crystal which will never cause cell growth resulting from composition supercooling is produced stably in continuous lengths by changing the temperature gradient DELTAT in melt in proportion to rise in the solidification ratio g.
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