发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the performance, reliability, and yield of a device by forming a plurality of elements on a substrate wherein splitting grooves are formed on a main surface and the elements are split after providing heating electrodes at an element region. CONSTITUTION:Streak shaped protective patterns 22 having almost the same width as that of functional regions 18 are provided on a P-side electrode 19 on a GaAs substrate 21. Next, grooves 23 are formed at a right angle to the regions 18 and grooves 24 are formed in parallel with the regions 18 at a pitch of resonator length. The grooves 23 are not provided at the regions 18 which is covered with the protective patterns. The patterns 22 are melt and removed and narrow width plating mask patterns 25 are applied to form an Au plating electrode 26 on the P-side electrode 19. Next, the electrode 26 is split into chips and laser chips having dimensions L1, L2 from the end of the resonator of 5mum or less and an electrode 26 with thickness of about 5-10mum are completed. In this composition, the distance from the end of the resonator to the electrode 26 can be shortened and threshold current is equalized, and radiant heat efficiency at a light emitting region can be improved. Furthermore, the yield of elements can be improved.
申请公布号 JPS577184(A) 申请公布日期 1982.01.14
申请号 JP19800081226 申请日期 1980.06.16
申请人 FUJITSU LTD 发明人 KARUISHI MASAYOSHI;OOSAKA SHIGEO
分类号 H01L23/36;H01L21/301;H01L33/30;H01L33/40;H01S5/00;H01S5/30 主分类号 H01L23/36
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