| 摘要 |
PURPOSE:To accurately control the local heat of a substance to be heated by superposing and emitting a laser light of long wavelength from the foundation absorption end of the substance and an electron beam controlled in a desired region, and thus absorbing the laser energy to the free electrons of the unit to be heated. CONSTITUTION:In a laser heating system for locally heating a semiconductor device, a CO2 gas layer or long wavelength is, for example, used via the band interval of a unit to be heated, e.g., Si for a laser light source. Such laser light 2 and an electron beam 7 incident to desired infinitesimal region 8 are emitted under the control of the beam diameter, intensity and time to the unit 3 on a supporting base 4. Thus, the energy of the laser light 2 is absorbed to the free electrons excited to the region 8 during the period of superposing the laser light 2 and the electron beam 7, and the region 8 is heated to the desired temperature accurately. |
