| 摘要 |
PURPOSE:To obtain an MIS photoelectric converter with good yield and efficiency by forming an electrode section a plane in the semiconductor surface at a light irradiating surface side wherein anisotropic etching is applied to the parts except the electrode section and V-shaped or pedestal type grooves are provided. CONSTITUTION:An SiO2 mask composing two sides of a window in parallel with a surface (110) is applied on the (100) surface of a P type Si substrate and anisotropic etching is applied to form unevenness 9. At the same time, the removal of etching is also applied to the cracks on a scribe region 5 to completel grooves 10. With the SiO2 mask removed and an Si3N4 film 3 coated and adhered, ohmic contact to an Al electrode 2 at the rear side and the substrate 1 is simultaneously finished. Because the Al4N3 on the surface is a conductor, it does not affect any problem in said procedure. Al and Ni double electrodes 4, 11 are provided at a flat portion except the grooves 9 through the Si3N4 thin film 3 on the surface and a lead 22 is provided by preventing reflection by an Si3N4 film 21. As the lower side of the electrodes is flat, no pin holes occur on the film 3 and leakage is hard to occur. Conversion efficiency will also be improved as grid mismatching has been removed for the scribe line. |
