| 摘要 |
Photodiodes having high sensitivity for detecting and/or measuring the intensity of, preferably, monochromatic electromagnetic radiation having high pulse repetition frequencies, for example for use in optical telecommunications, in particular semiconductor diodes having at least one barrier layer in the form of a p-n or p-i-n junction. The invention relates to photodiodes having optical structures of such a type which largely eliminate those radiated power conversion pulses which occur in conventional photodiodes as a result of incomplete absorption in the barrier layer region and also the reflection losses for a given wavelength range. This is done essentially by dimensioning the optical layer thickness of the semiconductor in accordance with the patent claims and backing said optical layer in accordance with the invention with a sequence of interference layers. <IMAGE>
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