摘要 |
PURPOSE:To control the degree of oxidation of a deposited product by ionizing gas introduced into a vacuum container by a vacuum deposition method, emitting it to a depositing substance to activate the metallic component or oxygen of the substance, and thus varying the activity of the substance. CONSTITUTION:An ionizing current is applied to an anode 7 and a cathode 8 from a power source 17 in a vacuum container 1, ionized argon gas is introduced, and is emitted. A deposition source 2 is heated by a power source 16 to vaporize TeOx of depositing mother material, when it reaches the prescribed temperature, a shutter 14 is opened, previous Ar ions are emitted to the deposited material, the shutter 15 is, when both are stabilized, opened, and a thin oxidized tellurium film is covered on a substrate 13. Thus, the degree of the oxidation of the deposited product can be arbitrarily controlled. |