发明名称 MANUFACTURE OF THIN OXIDE FILM
摘要 PURPOSE:To control the degree of oxidation of a deposited product by ionizing gas introduced into a vacuum container by a vacuum deposition method, emitting it to a depositing substance to activate the metallic component or oxygen of the substance, and thus varying the activity of the substance. CONSTITUTION:An ionizing current is applied to an anode 7 and a cathode 8 from a power source 17 in a vacuum container 1, ionized argon gas is introduced, and is emitted. A deposition source 2 is heated by a power source 16 to vaporize TeOx of depositing mother material, when it reaches the prescribed temperature, a shutter 14 is opened, previous Ar ions are emitted to the deposited material, the shutter 15 is, when both are stabilized, opened, and a thin oxidized tellurium film is covered on a substrate 13. Thus, the degree of the oxidation of the deposited product can be arbitrarily controlled.
申请公布号 JPS575337(A) 申请公布日期 1982.01.12
申请号 JP19800080554 申请日期 1980.06.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAMURA SUGURU
分类号 C23C14/32;H01L21/316;(IPC1-7):01L21/316 主分类号 C23C14/32
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