发明名称 THIN FILM DIODE AND MANUFACTURE THEREOF
摘要 PURPOSE:To readily manufacture a thin film diode and to enhance the reliability and performance of the diode by sequentially laminating a Cd layer, a Te layer and the second electrode layer on the first electrode of an insulating substrate. CONSTITUTION:The first electrode layer 2 of desired shape is formed on a substrate 1 of glass or glazed ceramic or the like. Then, a CdS film 3 is formed by vacuum deposition process or sputtering method or the like. Thereafter, a Te film 4 is formed by vacuum deposition process or sputtering method on the surface formed with the film 3, and a Te layer 4 and a conductive film 5 are further formed thereon by vacuum deposition process or sputtering method or the like. The film 5 forms the second electrode layer.
申请公布号 JPS575372(A) 申请公布日期 1982.01.12
申请号 JP19800077856 申请日期 1980.06.11
申请人 RICOH KK 发明人 ITAGAKI MASAKUNI;SEGAWA HIDEO;MORI KOUJI
分类号 H01L27/146;H01L29/861;H01L31/10;H01L31/18 主分类号 H01L27/146
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