| 摘要 |
PURPOSE:To form a single crystalline semiconductor film on an insulating film by forming an Si oxidized film thinner than a recess in the recess of an Si substrate, then covering the entire surface with amorphous or polycrystalline Si, annealing by laser and single-crystallizing it. CONSTITUTION:Recesses are formed on an Si single crystalline substrate 1, a thin Si oxidized film 2 thinner than the recess is formed in the recess, amorphous or polycrystalline Si3 is covered on the overall surface, is annealed by laser to single- crystallize the film 3, then the Si layer of the part in which no film 2 exists is removed, the exposed surface is oxidized, and the film 2 is thus continued thereto. Thus, a single crystalline semiconductor film can be formed on the insulating film. |
