| 摘要 |
PURPOSE:To reduce the leakage current of an MOS integrated circuit by employing oxygen as one impurity in density of 16-23X10<17> atoms/cm<3> in a silicon single crystalline substrate. CONSTITUTION:A silicon single crystal containing a density of 16-23X10<17> atoms/ cm<3> of oxygen is used as an MOS integrated circuit substrate. When the substrate is treated at high temperature higher than 1,000 deg.C, the oxygen in the crystal serves to collect the impurity or distortion of the crystal causing the detrimental crystal defect and can thus maintain the density of the detrimental crystal defect in low level. Since it can maintain the crystalline defect density in low level, preferable leakage current characteristic can be obtained. |
