| 摘要 |
PURPOSE:To effectively utilize recovered chips of Si, lithium tantalate or lithium niobate by treating with supersonic wave the chips in a solution capable of dissolving the chips, removing the impurities, and recovering as semiconductor chips being less contaminated. CONSTITUTION:Since impurities 1 of contamination source and scar or crack 3 are concentrated on the surface 2 when powder chips produced in cutting and polishing Si, lithium tantalate, or lithium niobate are recovered, the recovered chips are treated with supersonic wave having 10-60kHz in a solution capable of dissolving the chips, e.g., hydrofluoric acid or a mixture solution of hydrofluoric acid and other strong acid. Thus, the quantity of semiconductor loss is reduced to effectively recover the semiconductor chips. |
