| 摘要 |
A method for adhering a passivation layer to gold regions in a semiconductor device. The method comprises the steps of providing a semiconductor device having at least one gold region formed thereon. A layer of a metal reactive with the gold is then deposited over the gold region so as to form a gold-reactive metal interface region. The gold and metal are then reacted at the interface region. Any metal which does not react is removed so as to expose a reacted interface region. Finally, a layer of passivation material is deposited over the exposed reacted interface region. Because the passivation material is then in contact with reacted gold regions, its adherence thereto is substantially increased.
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