| 摘要 |
PURPOSE:To form a p-type region having effective p-type impurity density higher than a vacant lattice point density of the VI group elements by controlling the vapor of the VI group elements by a vapor pressure controlled temperature difference method liquid phase growing process and growing the II-VI group compound semiconductor. CONSTITUTION:A ZnSe crystalline substrate 5 is disposed on a carbon slider 1 in a quartz tube, a mixture solution 3 of Te and Se is filled in a melt tank 2, a cover is placed on the tank, the vapor pressure is controlled by the ratio of Te to Se, impurity is thus contained in the mixture solution, Au, Ag or P is then doped, crystals are grown at 800-400 deg.C, and a p-n junction is thus formed. In this manner, the junction can be formed at low temperature, and the range of the displacement from stoichiometric composition is reduced. Accordingly, the Se vacant lattice point and its complex density can be further decreased, and an efficient blue light emitting diode can be obtained. |
