| 摘要 |
PURPOSE:To highly integrate a semiconductor device without adding a precise lithographic step in a bipolar transistor by improving the base region, thereby preventing the C-E leakage. CONSTITUTION:A transistor is formed in an isolation region pattern 10 (in figure, respective rectangles indicate respective patterns of base region 13, base electrode 13', emitter retion 14, collector contact 15, and collector electrode 16.). A buried dioxidized silicon film 22, a P type base region 23, an N<+> type emitter region 24, an emitter electrode 24' are formed on an N type silicon substrate 21, and a transistor is thus formed. A part 30 of the base region 23 is deeply formed adjacent to the end of the emitter region in the periphery of the top of the apart surrounded at the side with the film 22. Thus, the distance between the regions 24 and 21 is sufficiently increased at the peripheral part, and the C-E leakage can be prevented. |
