| 摘要 |
PURPOSE:To form a preferable single crystalline semiconductor thin film on an insulating film by emitting a laser or the like to amorphous Si formed in the groove of the film having a groove, controlling the quality of the crystal, then forming amorphous Si on the overall surface, emitting again the laser or the like. CONSTITUTION:A thermally oxidized film 12 is formed on a single crystalline Si substrate 11, a groove (having, for example, a rectangular shape of 2mumX30mum and a depth of approx. 0.1mum with a pitch of 4mum) is formed on the film 12, a polycrystalline Si 15 is formed in the groove, the crystal is controlled in quality by emitting a laser light, electron beam or the like thereto, and a polycrystalline Si 16 is formed on the overall surface, the laser light or electron beam is again emitted thereto, the crystal is thus controlled as a whole with the Si controlled in quality in the groove as nuclide, and is entirely single-crystallized. Thus preferable single crystalline semiconductor film can be readily formed on the insulating film, and a high speed semiconductor device can be manufactured in high density. |
