HOCHLEISTUNGS-MOS-FELDEFFEKTTRANSISTOR SOWIE INTEGRIERTE STEUERSCHALTUNG HIERFUER
摘要
A lateral conduction high power MOSFET chip with integrated control circuits in disclosed for high-side switching applications. A first surface field reduction region disposed between drain and source regions extends from the chip surface and into its body and has a charge density of about 1x1012 ions/cm2. A second surface field reduction region extends below the first region and the source and drain regions and has a charge density of from about 1.5x1012 to 2.0x1012 ions/cm2. A substrate extends below the second region and is isolated from both drain and source regions to enable the use of the device as a high-side switch.
申请公布号
DE3816002(A1)
申请公布日期
1988.12.08
申请号
DE19883816002
申请日期
1988.05.10
申请人
INTERNATIONAL RECTIFIER CORP., EL SEGUNDO, CALIF., US