| 摘要 |
PURPOSE:To realize a small size for a power-on resetting circuit and also secure long and stable duration for a reset pulse, by connecting the gate of the 2nd enhancement type MOSFET to the source of the 1st enhancement type MOSFET whose drain and gate are connected to a power source. CONSTITUTION:Both the gate and the drain of the 1st enhancement type MOSFET 1 having the threshold voltage are connected to a power source VDD, at the gate of the 2nd enhancement type MOSFET5 is connected to the source of the MOSFET1. The drain of the MOSFET5 is connected to the source VDD, and the source is connected to an earth or another power source via a capacitor 2 as well as to an inverter circuit 3. Then a reset signal output is obtained from the output of the circuit 3. |
