| 摘要 |
PURPOSE:To decrease the capacity of a gate electrode to a semiconductor substrate by making the thickness of an oxide film just under a bent section of the gate electrode thicker than the thickness of the oxide film just under a section except the bent section. CONSTITUTION:An N conductive type impurity diffusion layer is formed to the semiconductor substrate 100 so that a P conductive type impurity region 100a remains in meandering arrangement. The impurity diffusion layer constitutes a source 101 and a drain 102, holding the remaining region 100a. The oxide films 104 are made up at the bent sections 103 of the region 100a arranged meanderinly. The gate electrodes 106 are laminated on the region 100a and the bent sections 103 through gate oxide films 105. The films 105 are also set to thickness larger than other sections except the bent sections 103 at the bent sections 103. Accordingly, only capacity to the substrate 100 at the bent sections 103 can be decreased without substantially changing the width of a gate channel. Thus, the operation of a transistor at high speed can be attained. |
