| 摘要 |
PURPOSE:To prevent the occurrence of temperature difference between a material to be treated and a jig in heat treatment, by forming a part, which is brought into contact with at least the material to be treated, with a material, which has the same or approximate heat absorption rate as that of the material to be treated. CONSTITUTION:Supporting projections 4a-4c of a wafer holding jig 1 for supporting a wafer 2 in a treating region and a main body 3 of the jig are formed with silicon or silicon carbide, which has the same or approximate heat absorption rate as that of the material of the wafer. In this method, difference in heating speed due to the lighting of a lamp does not occur between the wafer 2 and the wafer holding jig 1. Therefore, partial decrease in temperature of the wafer is not yielded at the contact part with the supporting projections 4a-4c of the wafer holding jig 1. Thus the defective treatment due to thermal-stress transformation can be effectively prevented. |
