| 摘要 |
PURPOSE:To prevent the generation of a blooming by forming resistance regions with one conduction type to a region existing between adjacent P-N junctions for receiving light and regions existing among the P-N junctions for receiving light and the storing reading circuits. CONSTITUTION:A P type semiconductor layer with boron concentration lower than a P<+> type monocrystal semiconductor substrate 26 is formed on the substrate 26 in Si containing boron in high concentration according to an epitaxial method. Boron is diffused in high concentration, and P<+> type low resistance regions 28 reaching the substrate 26 are made up, thus forming divided island-shaped regions 27, 29. The surface is coated with a Si nitride film, the nitride films of sections 31 are removed, a Si dioxide film 30 is built up and a gate electrode 23 in polycrystal Si is made up on the film 30. P ions are injected, and N type regions 20, 22, 24 are formed. Wiring 21 connecting the regions 20, 22 and wiring 25 reading signals are made up by polycrystal Si or metal with low resistance. Accordingly, the efficiency of conversion of the P-N junctions for receiving light is increased, and the generation of the blooming can be prevented. |
