发明名称 MANUFACTURE OF PHOTODIODE
摘要 PURPOSE:To obtain the photodiode having excellent performance by conducting no heat treatment at respective period after a CdS film, a CdTe film and a Te film are laminated. CONSTITUTION:A transparent conductive film 2 in In2O3, etc. is formed on a light transmitting substrate 1 in soda glass, etc. according to a spray method, the CdS film 3 is laminated on the film 2 according to a sputtering method, etc. and heat treatment is not conducted after laminating. The CdTe film 4 is laminated on the film 3 according to the sputtering method, etc., and heat treatment is not conducted after laminating. The Te film is laminated on the CdTe film according to the sputtering method, keeping the temperature of the substrate at 500 deg.C or lower, and heat treatment is not conducted after laminating. An ohmic electrode 6 in gold, Al, etc. is formed on the film 5 according to evaporation, etc. Accordingly, this method has no thermal harmful influence on the Te film because heat treatment is not conducted to the CdS film, the CdTe film and the Te film. Thus, the increase of dark currents or the deterioration of a switching characteristic can be prevented.
申请公布号 JPS574174(A) 申请公布日期 1982.01.09
申请号 JP19800077192 申请日期 1980.06.10
申请人 RICOH KK 发明人 MORI KOUJI;ITAGAKI MASAKUNI
分类号 H01L31/18 主分类号 H01L31/18
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