| 摘要 |
PURPOSE:To provide a stable characteristic and improve a reliability of the semiconductor device by a method an electric pole pattern of connection electric pole layer for forming a multilayer electric pole structure is made as an electrode structure smaller than an electric pole pattern in a lower barrier metallic layer. CONSTITUTION:Insulative film 2 is selectively removed, open holes are provided in the base area 3 and the emitter area 4 so as to form a platinum silicide layer 5. Then, a thin titanium film 6 is formed and a platinum thin film 7 in the barrier layer is formed under a spattering by a photo-resist method. Then, a masking is performed by the photo-resist method so as to form a metalic thin film 8 for a connection electric pole. In this case, as an electric pole pattern 8, a mask smaller than the electric pole pattern 7 is applied. Thereby, a semiconductor device having a high reliability may be made, metal piece and metal burrs being not contacted with other electric poles caused by heat and shock during a mounting and a bonding operation, and some metallic materials being not floated in the insulative film. |
