| 摘要 |
PURPOSE:To obtain small dark currents at the time of reverse bias and excellent light currents at the time of light irradiation while increasing light response speed by conducting heat treatment at least after a CdS film is laminated or a CdTe film is laminated. CONSTITUTION:A transparent conductive film 2 in In2O3, etc. is formed on a light transmitting substrate 1 according to a spray method, etc., and the CdS film is laminated on the film 2 according to a sputtering method, etc. When the CdS film is thermally treated, the CdS film is treated for 10-60min in an atmosphere containing oxygen at a temperature of 700 deg.C or lower, preferably, 300-600 deg.C. The CdTe film 4 is laminated on the CdS film according to the sputtering method, etc., and when the film 4 is thermally treated it is treated in the atmosphere containing oxygen at a temperature of 100-700 deg.C, preferably, 300-600 deg.C. A Te film 5 is laminated on the film 4 according to the sputtering method, etc., and heat treatment is not conducted after laminating. An ohmic electrode 6 in gold, Al, etc. is formed on the film 5 according to evaporation, etc., and the photodiode is obtained. |
