| 摘要 |
PURPOSE:To prevent the rising and the expansion in the lateral direction of an oxide film isolation layer by a method wherein an anisotropic etching is performed on the aperture section of the mask consisting of an oxide film and a nitriding film, a thin oxide film is provided on the etched side section and then an oxidation treatment is performed. CONSTITUTION:The thin oxide film 12 and the nitriding film 13 are formed on the Si substrate 11, consisting of a (100) face, in the process of formation of a field oxide film which will be used for separation of elements of MOSIC, for example. Then, the nitriding film 13 and the oxide film 12 located on the field section are removed and after the side section of the substrate 11 has been turned to a (111) face by performing an anisotropic etching, a thermal nitriding film 14 is formed by heating the above in NH3. Then, a thin (20Angstrom or thereabouts) nitriding film 141 is remained on the thickly formed side section by performing a plasma etching and subsequently, a field film 15 is formed by performing an oxidation by heat. Through these procedures, no rising is generated on the isolation oxide film layer 15 and the breaking of wires and the like can be prevented. Also, as the layer 15 is not expanded in lateral direction, a highly integrated IC can be obtained. |
