发明名称 MICROWAVE SEMICONDUCTOR AMPLIFIER
摘要 PURPOSE:To make unnecessary a DC blocking capacitor, by supplying a bias to a semiconductor element for a ridge, through the insertion of a dielectric substance plate between an inner wall of a waveguide and the ridge. CONSTITUTION:A signal inputted from a waveguide input terminal 6a is inputted to a base terminal of a transistor (TR)1 through a ridge 5a. The amplified signal passes through a ridge 5b and it is outputted from a waveguide output terminal 6b. Thin dielectric substance plates 8a, 8b are inserted between the ridges 5a, 5b and waveguides 10a, 10b and they are isolated against the DC bias, but in short circuit to signals in microwaves. A bias is applied to the TR1 through bias applying terminals 9a, 9b projected from the ridges 5a, 5b.
申请公布号 JPS573406(A) 申请公布日期 1982.01.08
申请号 JP19800076870 申请日期 1980.06.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 SAEKI AKIO
分类号 H03F3/60;(IPC1-7):03F3/60 主分类号 H03F3/60
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