INSULATED GATE TYPE FIELD EFFECT TRANSISTOR

摘要

PURPOSE:To enhance the withstand voltage of a field effect transistor by eliminating the occurrence of the concentration of an electric field in the V-shaped semiconductor region. CONSTITUTION:When a control voltage for setting a conductive layer 49 side at positive is applied between a conductive layer 54 as a source conductive layer and a conductive layer 49 as a gate conductive layer in the state that a power source for setting a conductive layer 53 side at positive is connected between the layer 54 and the layer 53 as a drain conductive layer, an N-type inversion layer is formed on the surface of the region under an insulating layer 48 of a semiconductor region 43 as a channel forming region, and a current will flow from the layer 53 side to the layer 54 side. When a control voltage for setting the layer 49 side having a value lower than the minimum value of the control voltage obtaining ON function at positive or a control voltage for setting the layer 49 side at negative is applied between the layers 54 and 49, a current flowing through the layers 54 and 53 is interrupted.