| 摘要 |
PURPOSE:To readily control the impurty density and the diffusion depth of ion injection region and insular region respectively by forming the ion injection region and the insular region by ion injection. CONSTITUTION:An oxidized film 23 is formed on a P type silicon semiconductor substrate 21, and an ion injection region 22 is formed by ion injection. Then, N type impurity ions are injected on the surface of the substrate 21 to form an insular region 24. Subsequently, a P<+> type gate region 25 is formed on the surface of the region 24, the region 24 is divided into source and drain regions 26 and 27, source and drain contacting regions 31 and 32 are further formed, and source and drain electrodes 29 and 30 are then formed. |
