| 摘要 |
A method of providing in a self-registering manner underpasses in a semiconductor device having insulated gate field effect transistors, in which the underpasses below the field oxide connect together electrode zones of the field effect transistors. The field oxide (9) is obtained by local oxidation by means of an oxidation mask (10,11). After a first oxidation treatment a part of the oxidation mask (10,11) is removed and the semiconductor body (1) is doped locally with As or Sb atoms for the underpasses (8). The aperture in the doping mask coincides substantially with the part of the oxidation mask (10,11) to be removed, without critical alignment being necessary therefor, in that the masking effect of the already obtained oxide (27) is used. After the doping treatment a second oxidation treatment is carried out to complete the field oxide (9). |
