| 摘要 |
PURPOSE:To obtain the heat treatment device having high treatment efficiency by constituting the device thermally treating a semiconductor device by a heat treatment reaction section and a loader section and an unloader section through wafer carrying sections positioned at the both ends. CONSTITUTION:A wafer constituting the semiconductor device is housed in the loader section 7, forwarded to the heat treatment reaction section 9 through the wafer carrying section 10a, thermally treated here according to the predetermined method and transported to the unloader section through the carrying section 10b again. In this constitution, the reaction section 9 is formed by a heat treatment reaction chamber 3 surrounded by heating apparatus 4 consisting of electric heaters, infrared rays, high frequency, etc., and gates 12 for taking in and out the wafer 1 are mounted previously at an inlet and an outlet of the chamber. A sample base 2 loading the wafer 1 is attached on the bottom, a gas introducing port 6 penetrating the bottom of the reaction chamber 3 is formed in the vicinity of the base 2 and the desired gas is sent into the reaction chamber 3 by means of a pressure device 11. Accordingly, the device is assembled, automation is enabled and the efficiency of treatment is improved. |
